If you have been searching for MMBZ20VALT1G of Semiconductor Devices Unitized components with NSN 5961016607000 under FSC 5961 Semiconductor Devices and Associated Hardware, look no further than Limitless Aerospace. MMBZ20VALT1G part is listed alongside the other Semiconductor Devices Unitized parts, and it has been manufactured by Semiconductor Components Industries (CAGE Code 1MQ07). With current availability through our website, we invite you to request a quick and competitive quote for MMBZ20VALT1G by filling out and submitting the RFQ form below. By providing us with information such as your target price and when you need your parts by, we can ensure that we offer a personalized solution that accommodates your individual needs and requirements.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-660-7000 Item Description: Semiconductor Devices Unitized | 5961 | 016607000 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mmbz20valt1g | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ABKW | OVERALL HEIGHT | 0.039 INCHES NOMINAL |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE PHOTO |
ABHP | OVERALL LENGTH | 0.114 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABMK | OVERALL WIDTH | 0.094 INCHES NOMINAL |
AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR AND ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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