If you have been searching for N82S185F of Microcircuit Memory components with NSN 5962011226972 under FSC 5962 Microcircuits Electronic, look no further than Limitless Aerospace. N82S185F part is listed alongside the other Microcircuit Memory parts, and it has been manufactured by Philips Semiconductors Ltd (CAGE Code 18324). With current availability through our website, we invite you to request a quick and competitive quote for N82S185F by filling out and submitting the RFQ form below. By providing us with information such as your target price and when you need your parts by, we can ensure that we offer a personalized solution that accommodates your individual needs and requirements.
NSN parts are those that follow the NSN system as dictated by the NATO Standardization Agreements, and they contain a 13-digit serial number to optimize the procurement, stocking, and issuing of items through the federal supply system. On Limitless Aerospace, we make finding the NSN parts and components you need easy, and customers may peruse our robust NSN part catalogues or use our search engine to find specific items with ease. As the only independent distributor with a no China sourcing pledge, we choose to only stock items from top global manufacturers such as Philips Semiconductors Ltd. Get started on the purchasing process for N82S185F today and see how we can serve as your strategic sourcing partner for all of your operational needs.
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.925 INCHES UM |
ADAU | BODY HEIGHT | 0.175 INCHES UM |
AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS UM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
ADAT | BODY WIDTH | 0.302 INCHES UM |
AEHX | UM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS UM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS UM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZZZ | MEMORY CAPACITY | UNKNOWN |
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