If you have been searching for S82S115F of Microcircuit Memory components with NSN 5962010395040 under FSC 5962 Microcircuits Electronic, look no further than Limitless Aerospace. S82S115F part is listed alongside the other Microcircuit Memory parts, and it has been manufactured by Philips Semiconductors Ltd (CAGE Code 18324). With current availability through our website, we invite you to request a quick and competitive quote for S82S115F by filling out and submitting the RFQ form below. By providing us with information such as your target price and when you need your parts by, we can ensure that we offer a personalized solution that accommodates your individual needs and requirements.
NSN parts are those that follow the NSN system as dictated by the NATO Standardization Agreements, and they contain a 13-digit serial number to optimize the procurement, stocking, and issuing of items through the federal supply system. On Limitless Aerospace, we make finding the NSN parts and components you need easy, and customers may peruse our robust NSN part catalogues or use our search engine to find specific items with ease. As the only independent distributor with a no China sourcing pledge, we choose to only stock items from top global manufacturers such as Philips Semiconductors Ltd. Get started on the purchasing process for S82S115F today and see how we can serve as your strategic sourcing partner for all of your operational needs.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ABHP | OVERALL LENGTH1 235 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
MEMORY | ABKW | OVERALL HEIGHT0 275 INCHES MINIMUM AND 0 390 INCHES MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 235 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 560 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 170 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING0 165 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWSTROBE AND BIPOLAR AND PROGRAMMED AND WENABLE AND 3-STATE OUTPUT AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY512 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC185 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC90 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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