If you have been searching for 1DT203L20TDB of Microcircuit Memory components with NSN 5962014912679 under FSC 5962 Microcircuits Electronic, look no further than Limitless Aerospace. 1DT203L20TDB part is listed alongside the other Microcircuit Memory parts, and it has been manufactured by Epson Electronics America Inc (CAGE Code 61722). With current availability through our website, we invite you to request a quick and competitive quote for 1DT203L20TDB by filling out and submitting the RFQ form below. By providing us with information such as your target price and when you need your parts by, we can ensure that we offer a personalized solution that accommodates your individual needs and requirements.
NSN parts are those that follow the NSN system as dictated by the NATO Standardization Agreements, and they contain a 13-digit serial number to optimize the procurement, stocking, and issuing of items through the federal supply system. On Limitless Aerospace, we make finding the NSN parts and components you need easy, and customers may peruse our robust NSN part catalogues or use our search engine to find specific items with ease. As the only independent distributor with a no China sourcing pledge, we choose to only stock items from top global manufacturers such as Epson Electronics America Inc. Get started on the purchasing process for 1DT203L20TDB today and see how we can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-491-2679 Item Description: Microcircuit Memory | 5962 | 014912679 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1dt203l20tdb | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 155.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | RADAR THREAT EMITTER AN/MST-T1; M3P REU-L |
CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND ASYNCHRONOUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS ASYNCHRONOUS FIFO |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
FEAT | SPECIAL FEATURES | 2,048 X 9-BIT; THIN CERAMIC DIP |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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