If you have been searching for 1280PALC22V10-3 of Microcircuit Memory components with NSN 5962013711422 under FSC 5962 Microcircuits Electronic, look no further than Limitless Aerospace. 1280PALC22V10-3 part is listed alongside the other Microcircuit Memory parts, and it has been manufactured by Bae Systems Information And Electronic Systems Integration I (CAGE Code 72314). With current availability through our website, we invite you to request a quick and competitive quote for 1280PALC22V10-3 by filling out and submitting the RFQ form below. By providing us with information such as your target price and when you need your parts by, we can ensure that we offer a personalized solution that accommodates your individual needs and requirements.
NSN parts are those that follow the NSN system as dictated by the NATO Standardization Agreements, and they contain a 13-digit serial number to optimize the procurement, stocking, and issuing of items through the federal supply system. On Limitless Aerospace, we make finding the NSN parts and components you need easy, and customers may peruse our robust NSN part catalogues or use our search engine to find specific items with ease. As the only independent distributor with a no China sourcing pledge, we choose to only stock items from top global manufacturers such as Bae Systems Information And Electronic Systems Integration I. Get started on the purchasing process for 1280PALC22V10-3 today and see how we can serve as your strategic sourcing partner for all of your operational needs.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-371-1422 Item Description: Microcircuit Memory | 5962 | 013711422 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1280palc22v10-3 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT |
MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTIN |
MEMORY | AGAV | END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314 |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMED AND ULTRAVIOLET ERASABLE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | ZZZP | PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-3 |
MEMORY | ZZZX | DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING |
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